Parametric results for: PTFA220121M-V4 under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

SOURCE 5

9 hits Apply

Configuration (1)

SINGLE 5

9 hits Apply

DS Breakdown Voltage-Min (1)

65 V 5

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

9 hits Apply

Highest Frequency Band (1)

S BAND 5

9 hits Apply

R-PDSO-N10 4 S-PDSO-N10 1

9 hits Apply

e4 2

9 hits Apply

Manufacturer (3)

Cree, Inc. 2 Infineon Technologies AG 6 Wolfspeed 1

9 hits Apply

3 3

9 hits Apply

Number of Elements (1)

1 5

9 hits Apply

Number of Terminals (1)

10 5

9 hits Apply

ENHANCEMENT MODE 5

9 hits Apply

200.0 °C 4

9 hits Apply

PLASTIC/EPOXY 5

9 hits Apply

RECTANGULAR 4 SQUARE 1

9 hits Apply

SMALL OUTLINE 5

9 hits Apply

Active 1 Obsolete 1 Transferred 7

9 hits Apply

Yes 3

9 hits Apply

260 3 NOT SPECIFIED 3

9 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

9 hits Apply

Surface Mount (1)

YES 5

9 hits Apply