Parametric results for: PTFA261702E under RF Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 1

2 hits Apply

SOURCE 1

2 hits Apply

Configuration (2)

COMMON SOURCE, 2 ELEMENTS 1 SINGLE 1

2 hits Apply

DS Breakdown Voltage-Min (1)

65 V 1

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

Highest Frequency Band (1)

S BAND 1

2 hits Apply

R-CDFM-F4 1

2 hits Apply

e4 1

2 hits Apply

Manufacturer (1)

Infineon Technologies AG 2

2 hits Apply

Number of Elements (2)

1 1 2 1

Min - Max

2 hits Apply

Number of Terminals (1)

4 1

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

200.0 °C 2

2 hits Apply

CERAMIC, METAL-SEALED COFIRED 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

FLANGE MOUNT 1

2 hits Apply

Transferred 2

2 hits Apply

Yes 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

643 W 2

2 hits Apply

Surface Mount (1)

YES 1

2 hits Apply