Parametric results for: PTFC261402FCV1R250 under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JESD-30 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Gain-Min (Gp) Surface Mount

SOURCE 2

4 hits Apply

Configuration (1)

COMMON SOURCE, 2 ELEMENTS 2

4 hits Apply

DS Breakdown Voltage-Min (1)

65 V 2

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

4 hits Apply

Highest Frequency Band (1)

S BAND 2

4 hits Apply

R-CDFP-F4 2

4 hits Apply

Manufacturer (3)

Cree, Inc. 1 Infineon Technologies AG 2 Wolfspeed 1

4 hits Apply

1 1

4 hits Apply

Number of Elements (1)

2 2

4 hits Apply

Number of Terminals (1)

4 2

4 hits Apply

ENHANCEMENT MODE 2

4 hits Apply

225.0 °C 2

4 hits Apply

CERAMIC, METAL-SEALED COFIRED 2

4 hits Apply

RECTANGULAR 2

4 hits Apply

FLATPACK 2

4 hits Apply

Active 1 Obsolete 2 Transferred 1

4 hits Apply

NOT SPECIFIED 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

4 hits Apply

Power Gain-Min (Gp) (1)

17.0 dB 2

4 hits Apply

Surface Mount (1)

YES 2

4 hits Apply