Parametric results for: PUMH11.115 under Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT IN BIAS RESISTOR RATIO IS 1 2

2 hits Apply

Collector Current-Max (IC) (1)

100 mA 2

2 hits Apply

2.5 pF 1

2 hits Apply

Collector-Emitter Voltage-Max (1)

50 V 2

2 hits Apply

Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR 2

2 hits Apply

DC Current Gain-Min (hFE) (1)

30.0 2

2 hits Apply

R-PDSO-G6 2

2 hits Apply

e3 2

2 hits Apply

Manufacturer (2)

Nexperia 1 NXP Semiconductors 1

2 hits Apply

1 2

2 hits Apply

Number of Elements (1)

2 2

2 hits Apply

Number of Terminals (1)

6 2

2 hits Apply

150.0 °C 2

2 hits Apply

-65.0 °C 1

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE 2

2 hits Apply

Active 1 Transferred 1

2 hits Apply

260 2

2 hits Apply

Polarity/Channel Type (1)

NPN 2

2 hits Apply

200 mW 1 300 mW 1

Min (W) - Max (W)

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply

Transition Frequency-Nom (fT) (1)

230 MHz 2

2 hits Apply