Parametric results for: QM3004M3 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

130.0 mJ 1

1 hit Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

1 hit Apply

DS Breakdown Voltage-Min (1)

30 V 1

1 hit Apply

Drain Current-Max (ID) (1)

11 A 1

1 hit Apply

Drain-source On Resistance-Max (1)

9 mΩ 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

S-PDSO-F8 1

1 hit Apply

Manufacturer (1)

UPI Semiconductor Corp 1

1 hit Apply

Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

8 1

1 hit Apply

ENHANCEMENT MODE 1

1 hit Apply

-55.0 °C 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

SQUARE 1

1 hit Apply

SMALL OUTLINE 1

1 hit Apply

Contact Manufacturer 1

1 hit Apply

NOT SPECIFIED 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply