Filter Your Search
1 - 6 of 6 results
|
RF1S70N06SM9A
Fairchild Semiconductor Corporation
|
Check for Price | No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 70 A | 14 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 W | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e0 | Not Qualified | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | D2PAK | TO-263AB, 3 PIN | 4 | unknown | EAR99 | |||||||
|
RF1S70N06SM
Fairchild Semiconductor Corporation
|
Check for Price | No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 70 A | 14 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 W | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e0 | Not Qualified | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | D2PAK | TO-263AB, 3 PIN | 4 | compliant | EAR99 | |||||||
|
RF1S70N06SM
Intersil Corporation
|
Check for Price | No | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 70 A | 14 mΩ | AVALANCHE RATED | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 W | 150 W | SWITCHING | SILICON | 125 ns | 125 ns | TO-263AB | R-PSSO-G2 | e0 | Not Qualified | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | SINGLE | INTERSIL CORP | D2PAK | TO-263AB, 3 PIN | 4 | not_compliant | EAR99 | 8541.29.00.95 | ||
|
RF1S70N06SM
Harris Semiconductor
|
Check for Price | No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 70 A | 14 mΩ | AVALANCHE RATED | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 W | 150 W | SWITCHING | SILICON | 125 ns | 125 ns | TO-263AB | R-PSSO-G2 | e0 | Not Qualified | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | SINGLE | HARRIS SEMICONDUCTOR | unknown | EAR99 | 8541.29.00.95 | |||||
|
RF1S70N06SM9A
Harris Semiconductor
|
Check for Price | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 70 A | 14 mΩ | AVALANCHE RATED | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 W | SWITCHING | SILICON | 125 ns | 125 ns | TO-263AB | R-PSSO-G2 | Not Qualified | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | HARRIS SEMICONDUCTOR | unknown | EAR99 | 8541.29.00.95 | |||||||||
|
RF1S70N06SM9A
Intersil Corporation
|
Check for Price | No | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 80 V | 1 | 70 A | 14 mΩ | MEGAFET | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 W | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e0 | Not Qualified | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin/Lead (Sn/Pb) | GULL WING | SINGLE | INTERSIL CORP | D2PAK | TO-263AB, 3 PIN | 4 | not_compliant | EAR99 |