Parametric results for: RFM10P12 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

DRAIN 2

4 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 2

4 hits Apply

DS Breakdown Voltage-Min (1)

120 V 2

4 hits Apply

Drain Current-Max (ID) (1)

10 A 3

4 hits Apply

Drain-source On Resistance-Max (1)

500 mΩ 2

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

4 hits Apply

350 pF 1

4 hits Apply

TO-204AA 2

4 hits Apply

O-MBFM-P2 2

4 hits Apply

e0 3

4 hits Apply

Manufacturer (4)

General Electric Solid State 1 Harris Semiconductor 1 Rochester Electronics LLC 1 Thomson Consumer Electronics 1

4 hits Apply

Number of Elements (1)

1 3

4 hits Apply

Number of Terminals (1)

2 2

4 hits Apply

ENHANCEMENT MODE 3

4 hits Apply

150.0 °C 2

4 hits Apply

METAL 2

4 hits Apply

ROUND 2

4 hits Apply

FLANGE MOUNT 2

4 hits Apply

Active 1 Obsolete 2 Transferred 1

4 hits Apply

No 1

4 hits Apply

NOT SPECIFIED 1

4 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 3

4 hits Apply

100 W 1

4 hits Apply

100 W 2

4 hits Apply

Surface Mount (1)

NO 3

4 hits Apply