Parametric results for: RJK0301DPB under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 3

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

4 hits Apply

DS Breakdown Voltage-Min (1)

30 V 3

4 hits Apply

Drain Current-Max (ID) (1)

60 A 3

4 hits Apply

Drain-source On Resistance-Max (1)

4 mΩ 3

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

4 hits Apply

R-PSSO-G4 3

4 hits Apply

Manufacturer (1)

Renesas Electronics Corporation 4

4 hits Apply

Number of Elements (1)

1 3

4 hits Apply

Number of Terminals (1)

4 3

4 hits Apply

ENHANCEMENT MODE 3

4 hits Apply

150.0 °C 1

4 hits Apply

PLASTIC/EPOXY 3

4 hits Apply

RECTANGULAR 3

4 hits Apply

SMALL OUTLINE 3

4 hits Apply

Not Recommended 1 Obsolete 3

4 hits Apply

Yes 3

4 hits Apply

NOT SPECIFIED 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

4 hits Apply

65 W 1

4 hits Apply

Surface Mount (1)

YES 3

4 hits Apply