Parametric results for: RN1110FV under Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT-IN BIAS RESISTOR 1

1 hit Apply

Collector Current-Max (IC) (1)

100 mA 1

1 hit Apply

Collector-Emitter Voltage-Max (1)

50 V 1

1 hit Apply

Configuration (1)

SINGLE WITH BUILT-IN RESISTOR 1

1 hit Apply

DC Current Gain-Min (hFE) (1)

120.0 1

1 hit Apply

R-PDSO-F3 1

1 hit Apply

Manufacturer (1)

Toshiba America Electronic Components 1

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Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

3 1

1 hit Apply

150.0 °C 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

SMALL OUTLINE 1

1 hit Apply

Active 1

1 hit Apply

NOT SPECIFIED 1

1 hit Apply

Polarity/Channel Type (1)

NPN 1

1 hit Apply

150 mW 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply

Transition Frequency-Nom (fT) (1)

250 MHz 1

1 hit Apply