Parametric results for: RN1206 under Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT IN BIAS RESISTOR RATIO IS 10 1 BUILT-IN BIAS RESISTOR RATIO IS 10 1

3 hits Apply

Collector Current-Max (IC) (1)

100 mA 2

3 hits Apply

6 pF 2

3 hits Apply

Collector-Emitter Voltage-Max (1)

50 V 2

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN RESISTOR 2

3 hits Apply

DC Current Gain-Min (hFE) (1)

80.0 2

3 hits Apply

R-PSIP-T3 2

3 hits Apply

e0 1

3 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 3

3 hits Apply

Number of Elements (1)

1 2

3 hits Apply

Number of Terminals (1)

3 2

3 hits Apply

150.0 °C 2

3 hits Apply

PLASTIC/EPOXY 2

3 hits Apply

RECTANGULAR 2

3 hits Apply

IN-LINE 2

3 hits Apply

Active 1 Obsolete 2

3 hits Apply

Polarity/Channel Type (1)

NPN 2

3 hits Apply

300 mW 1

3 hits Apply

Surface Mount (1)

NO 2

3 hits Apply

Transition Frequency-Nom (fT) (1)

250 MHz 2

3 hits Apply