Parametric results for: RN1301- under Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT IN BAIS RESISTOR RATIO IS 1 1 BUILT IN BIAS RESISTANCE RATIO IS 1 2 BUILT-IN BIAS RESISTOR RATIO IS 1 3

7 hits Apply

Collector Current-Max (IC) (1)

100 mA 5

7 hits Apply

Collector-Emitter Voltage-Max (1)

50 V 5

7 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN RESISTOR 5

7 hits Apply

DC Current Gain-Min (hFE) (1)

30.0 5

7 hits Apply

R-PDSO-G3 5

7 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 7

7 hits Apply

Number of Elements (1)

1 5

7 hits Apply

Number of Terminals (1)

3 5

7 hits Apply

PLASTIC/EPOXY 5

7 hits Apply

RECTANGULAR 5

7 hits Apply

SMALL OUTLINE 5

7 hits Apply

Active 3 Obsolete 4

7 hits Apply

Yes 1

7 hits Apply

260 1 NOT SPECIFIED 2

7 hits Apply

Polarity/Channel Type (2)

NPN 4 PNP 1

7 hits Apply

100 mW 1

7 hits Apply

Surface Mount (1)

YES 5

7 hits Apply

Transition Frequency-Nom (fT) (2)

200 MHz 1 250 MHz 4

Min (MHz) - Max (MHz)

7 hits Apply