Parametric results for: RN4982 under Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT IN BIAS RESISTANCE RATIO IS 1 1 BUILT IN BIAS RESISTOR RATIO IS 1 1 BUILT-IN BIAS RESISITOR RATIO IS 1 1 BUILT-IN BIAS RESISTOR RATIO IS 0.1 2 BUILT-IN BIAS RESISTOR RATIO IS 1 2

21 hits Apply

Collector Current-Max (IC) (3)

50 mA 2 80 mA 2 100 mA 9

Min (A) - Max (A)

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6 pF 1

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Collector-Emitter Voltage-Max (2)

20 V 1 50 V 6

Min (V) - Max (V)

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Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR 7

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DC Current Gain-Min (hFE) (2)

50.0 11 60.0 2

Min - Max

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R-PDSO-F6 2 R-PDSO-G6 5

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Manufacturer (1)

Toshiba America Electronic Components 21

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Number of Elements (1)

2 13

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Number of Terminals (1)

6 7

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150.0 °C 5

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PLASTIC/EPOXY 7

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RECTANGULAR 7

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SMALL OUTLINE 7

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Active 14 End Of Life 2 Obsolete 5

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No 1 Yes 2

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NOT SPECIFIED 9

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Polarity/Channel Type (1)

NPN AND PNP 13

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50 mW 4 100 mW 4 200 mW 2

Min (W) - Max (W)

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Surface Mount (1)

YES 13

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Transition Frequency-Nom (fT) (1)

250 MHz 5

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