Parametric results for: RQM2201DNS under Small Signal Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 2

4 hits Apply

Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 2

4 hits Apply

DS Breakdown Voltage-Min (1)

60 V 2

4 hits Apply

Drain Current-Max (ID) (1)

2 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

290 mΩ 2

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

S-PDSO-N6 2

4 hits Apply

Manufacturer (1)

Renesas Electronics Corporation 4

4 hits Apply

Number of Elements (1)

2 2

4 hits Apply

Number of Terminals (1)

6 2

4 hits Apply

ENHANCEMENT MODE 2

4 hits Apply

150.0 °C 4

4 hits Apply

PLASTIC/EPOXY 2

4 hits Apply

SQUARE 2

4 hits Apply

SMALL OUTLINE 2

4 hits Apply

Obsolete 4

4 hits Apply

Yes 4

4 hits Apply

NOT SPECIFIED 4

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

1.5 W 4

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply