Parametric results for: RT1N434S under Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT IN BIAS RESISTOR RATIO 4.7 1 BUILT IN BIAS RESISTOR RATIO IS 4.7 1

2 hits Apply

Collector Current-Max (IC) (1)

100 mA 2

2 hits Apply

Collector-Emitter Voltage-Max (1)

50 V 2

2 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN RESISTOR 2

2 hits Apply

DC Current Gain-Min (hFE) (1)

50.0 2

2 hits Apply

R-PSIP-T3 2

2 hits Apply

Manufacturer (2)

Isahaya Electronics Corporation 1 Mitsubishi Electric 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

3 2

2 hits Apply

150.0 °C 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

IN-LINE 2

2 hits Apply

Contact Manufacturer 1 Obsolete 1

2 hits Apply

Polarity/Channel Type (1)

NPN 2

2 hits Apply

450 mW 1

2 hits Apply

450 mW 1

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply

Transition Frequency-Nom (fT) (1)

200 MHz 2

2 hits Apply