Parametric results for: S-1000C30-I4T1G under Power Management Circuits
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S-1000C30-I4T1G
Seiko Instruments Inc
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Check for Price | Yes | Transferred | 1.2 V | 950 mV | 5.5 V | 900 nA | +3V | 1 | YES | NO | VOLTAGE DETECTOR | 1 | CMOS | INDUSTRIAL | R-PDSO-F4 | e6 | Not Qualified | 85 °C | -40 °C | 4 | PLASTIC/EPOXY | VSOF | FL4,.06,25 | RECTANGULAR | SMALL OUTLINE, VERY THIN PROFILE | YES | TIN BISMUTH | FLAT | 650 µm | DUAL | 1.2 mm | 1.4 mm | 500 µm | SEIKO INSTRUMENTS USA INC | LEAD FREE, SNT-4 | compliant | |||||||||
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S-1000C30-I4T1G
ABLIC Inc.
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Check for Price | Yes | Yes | Obsolete | 1.2 V | 950 mV | 5.5 V | +3V | 1 | YES | NO | VOLTAGE DETECTOR | 1 | CMOS | INDUSTRIAL | R-PDSO-F4 | e6 | Not Qualified | 85 °C | -40 °C | 260 | 10 | 4 | PLASTIC/EPOXY | VSOF | RECTANGULAR | SMALL OUTLINE, VERY THIN PROFILE | YES | Tin/Bismuth (Sn/Bi) | FLAT | 650 µm | DUAL | 1.2 mm | 1.4 mm | 500 µm | ABLIC INC | LEAD FREE, SNT-4 | compliant | SOIC | 4 | EAR99 | 8542.39.00.01 |