Parametric results for: S2301 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Configuration (2)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 1 SINGLE WITH BUILT-IN DIODE 1

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DS Breakdown Voltage-Min (2)

20 V 1 1.2 kV 1

Min (V) - Max (V)

13 hits Apply

Drain Current-Max (ID) (2)

3.7 A 1 40 A 1

Min (A) - Max (A)

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Drain-source On Resistance-Max (2)

51 mΩ 1 111 mΩ 1

Min (Ω) - Max (Ω)

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METAL-OXIDE SEMICONDUCTOR 2

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62 pF 1

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R-PDSO-G6 1 X-XXUC-N 1

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e0 7

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Manufacturer (4)

Formosa Microsemi Co Ltd 4 Hamamatsu Photonics 7 ROHM Semiconductor 1 Yangzhou Yangjie Electronics Co Ltd 1

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Number of Elements (2)

1 1 2 1

Min - Max

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Number of Terminals (1)

6 1

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ENHANCEMENT MODE 2

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60.0 °C 2 85.0 °C 5 150.0 °C 1

Min (°C) - Max (°C)

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-55.0 °C 1 -30.0 °C 7

Min (°C) - Max (°C)

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PLASTIC/EPOXY 1 UNSPECIFIED 1

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RECTANGULAR 1 UNSPECIFIED 1

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SMALL OUTLINE 1 UNCASED CHIP 1

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Active 11 Obsolete 2

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NOT SPECIFIED 1

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Polarity/Channel Type (2)

N-CHANNEL 1 P-CHANNEL 1

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1.2 W 1

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1.2 W 1

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Surface Mount (2)

NO 7 YES 2

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