Parametric results for: S2N2880 under Power Bipolar Transistors

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

HIGH RELIABILITY 1

3 hits Apply

COLLECTOR 2

3 hits Apply

Collector Current-Max (IC) (1)

5 A 3

3 hits Apply

Collector-Emitter Voltage-Max (1)

80 V 3

3 hits Apply

Configuration (1)

SINGLE 3

3 hits Apply

DC Current Gain-Min (hFE) (1)

15.0 1

3 hits Apply

TO-111 2 TO-59 1

3 hits Apply

O-MUPM-D3 2 O-MUPM-X3 1

3 hits Apply

e0 1

3 hits Apply

Manufacturer (2)

Microsemi Corporation 1 Solitron Devices Inc 2

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 3

3 hits Apply

200.0 °C 1

3 hits Apply

METAL 3

3 hits Apply

ROUND 3

3 hits Apply

POST/STUD MOUNT 3

3 hits Apply

Active 2 Transferred 1

3 hits Apply

No 3

3 hits Apply

NOT SPECIFIED 2

3 hits Apply

Polarity/Channel Type (1)

NPN 3

3 hits Apply

30 W 2

3 hits Apply

30 W 2

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply

Transition Frequency-Nom (fT) (1)

30 MHz 1

3 hits Apply