Parametric results for: S400-2 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

1 hit Apply

DS Breakdown Voltage-Min (1)

650 V 1

1 hit Apply

Drain Current-Max (ID) (1)

93 A 1

1 hit Apply

Drain-source On Resistance-Max (1)

27.5 mΩ 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

X-XXUC-N 1

1 hit Apply

Manufacturer (1)

ROHM Semiconductor 1

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Number of Elements (1)

1 1

1 hit Apply

ENHANCEMENT MODE 1

1 hit Apply

UNSPECIFIED 1

1 hit Apply

UNSPECIFIED 1

1 hit Apply

UNCASED CHIP 1

1 hit Apply

Active 1

1 hit Apply

NOT SPECIFIED 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply