Parametric results for: SD2900 under RF Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount Configuration (1)

SINGLE 2

2 hits Apply

DS Breakdown Voltage-Min (2)

60 V 1 65 V 1

Min (V) - Max (V)

2 hits Apply

Drain Current-Max (ID) (2)

900 mA 1 1.25 A 1

Min (A) - Max (A)

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 2

2 hits Apply

O-CRFM-F4 1 O-PRFM-F4 1

2 hits Apply

Manufacturer (1)

STMicroelectronics 2

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

4 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

200.0 °C 2

2 hits Apply

CERAMIC, METAL-SEALED COFIRED 1 PLASTIC/EPOXY 1

2 hits Apply

ROUND 2

2 hits Apply

FLANGE MOUNT 2

2 hits Apply

Obsolete 2

2 hits Apply

NOT SPECIFIED 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply