Parametric results for: SD5002J under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Surface Mount

LOW INSERTION LOSS 1

3 hits Apply

Configuration (1)

COMMON SUBSTRATE, 4 ELEMENTS WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

15 V 3

3 hits Apply

Drain Current-Max (ID) (1)

50 mA 3

3 hits Apply

Drain-source On Resistance-Max (1)

70 Ω 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

0.5 pF 3

3 hits Apply

R-CDIP-T16 2 R-GDIP-T16 1

3 hits Apply

Manufacturer (3)

Microchip Technology Inc 1 Teledyne Technologies Inc 1 Universal Semiconductor Inc 1

3 hits Apply

Number of Elements (1)

4 3

3 hits Apply

Number of Terminals (1)

16 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

85.0 °C 2

3 hits Apply

CERAMIC, GLASS-SEALED 1 CERAMIC, METAL-SEALED COFIRED 2

3 hits Apply

RECTANGULAR 3

3 hits Apply

IN-LINE 3

3 hits Apply

Obsolete 3

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply