Parametric results for: SI1032R under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOW THRESHOLD 3

6 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 4

6 hits Apply

DS Breakdown Voltage-Min (1)

20 V 4

6 hits Apply

Drain Current-Max (ID) (1)

140 mA 6

6 hits Apply

Drain-source On Resistance-Max (1)

5 Ω 4

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

R-PDSO-G3 4

6 hits Apply

e0 2 e3 4

6 hits Apply

Manufacturer (2)

Vishay Intertechnologies 3 Vishay Siliconix 3

6 hits Apply

1 4

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

3 4

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 4

6 hits Apply

PLASTIC/EPOXY 4

6 hits Apply

RECTANGULAR 4

6 hits Apply

SMALL OUTLINE 4

6 hits Apply

Active 2 Obsolete 4

6 hits Apply

Yes 1

6 hits Apply

260 2

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

280 mW 4

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply