Parametric results for: SI3458DV under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 4

6 hits Apply

DS Breakdown Voltage-Min (1)

60 V 4

6 hits Apply

Drain Current-Max (ID) (1)

3.2 A 6

6 hits Apply

Drain-source On Resistance-Max (1)

100 mΩ 4

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

R-PDSO-G6 4

6 hits Apply

e0 4 e3 1

6 hits Apply

Manufacturer (2)

Vishay Intertechnologies 3 Vishay Siliconix 3

6 hits Apply

1 1

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

6 4

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 2

6 hits Apply

PLASTIC/EPOXY 4

6 hits Apply

RECTANGULAR 4

6 hits Apply

SMALL OUTLINE 4

6 hits Apply

Obsolete 6

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

2 W 2

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply