Parametric results for: SI3460DV under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 5

6 hits Apply

DS Breakdown Voltage-Min (1)

20 V 5

6 hits Apply

Drain Current-Max (ID) (1)

5.1 A 6

6 hits Apply

Drain-source On Resistance-Max (1)

27 mΩ 5

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

MO-193AA 4

6 hits Apply

R-PDSO-G6 5

6 hits Apply

e0 2 e3 2

6 hits Apply

Manufacturer (2)

Vishay Intertechnologies 3 Vishay Siliconix 3

6 hits Apply

1 2

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

6 5

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 3

6 hits Apply

PLASTIC/EPOXY 5

6 hits Apply

RECTANGULAR 5

6 hits Apply

SMALL OUTLINE 5

6 hits Apply

Obsolete 6

6 hits Apply

Yes 1

6 hits Apply

260 2 NOT SPECIFIED 2

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

2 W 3

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply