Parametric results for: SI4490DY under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 1

4 hits Apply

DS Breakdown Voltage-Min (1)

200 V 1

4 hits Apply

Drain Current-Max (ID) (1)

2.85 A 3

4 hits Apply

Drain-source On Resistance-Max (1)

90 mΩ 1

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

4 hits Apply

R-PDSO-G8 1

4 hits Apply

e0 3

4 hits Apply

Manufacturer (2)

Vishay Intertechnologies 2 Vishay Siliconix 2

4 hits Apply

Number of Elements (1)

1 3

4 hits Apply

Number of Terminals (1)

8 1

4 hits Apply

ENHANCEMENT MODE 3

4 hits Apply

150.0 °C 2

4 hits Apply

PLASTIC/EPOXY 1

4 hits Apply

RECTANGULAR 1

4 hits Apply

SMALL OUTLINE 1

4 hits Apply

Obsolete 3 Transferred 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

4 hits Apply

3.1 W 2

4 hits Apply

Surface Mount (1)

YES 3

4 hits Apply