Parametric results for: SI4936DY under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (2)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 7 SINGLE 2

9 hits Apply

DS Breakdown Voltage-Min (1)

30 V 7

9 hits Apply

Drain Current-Max (ID) (1)

5.8 A 9

9 hits Apply

Drain-source On Resistance-Max (1)

37 mΩ 7

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 9

9 hits Apply

R-PDSO-G8 7

9 hits Apply

e0 2 e3 2

9 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 7 Vishay Intertechnologies 2

9 hits Apply

Number of Elements (2)

1 2 2 7

Min - Max

9 hits Apply

Number of Terminals (1)

8 7

9 hits Apply

ENHANCEMENT MODE 9

9 hits Apply

150.0 °C 4

9 hits Apply

PLASTIC/EPOXY 7

9 hits Apply

RECTANGULAR 7

9 hits Apply

SMALL OUTLINE 7

9 hits Apply

Obsolete 9

9 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 9

9 hits Apply

2 W 4

9 hits Apply

Surface Mount (1)

YES 9

9 hits Apply