Parametric results for: SI6926ADQ under Small Signal Field-Effect Transistors

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Manufacturer Part Number: si6926adq
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SI6926ADQ-T1-E3
Vishay Siliconix
$0.5372 Yes Yes Active N-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 8 20 V 2 4.1 A 30 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1 W SILICON R-PDSO-G8 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL VISHAY SILICONIX TSSOP SMALL OUTLINE, R-PDSO-G8 8 unknown EAR99 Vishay
SI6926ADQ-T1-GE3
Vishay Siliconix
$0.5785 Yes Yes Active N-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 8 20 V 2 4.1 A 30 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1 W SILICON R-PDSO-G8 e3 Not Qualified 1 150 °C -55 °C 260 40 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL VISHAY SILICONIX TSSOP SMALL OUTLINE, R-PDSO-G8 8 unknown EAR99 Vishay
SI6926ADQ-T1-GE3
Vishay Intertechnologies
$0.8100 Yes Active N-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 8 20 V 2 4.1 A 30 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1 W SILICON R-PDSO-G8 e3 Not Qualified 1 150 °C -55 °C 260 40 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL VISHAY INTERTECHNOLOGY INC ROHS COMPLIANT, TSSOP-8 compliant EAR99 Vishay
SI6926ADQ-T1-E3
Vishay Intertechnologies
$0.9641 Yes Active N-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 8 20 V 2 4.1 A 30 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1 W SILICON R-PDSO-G8 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL VISHAY INTERTECHNOLOGY INC TSSOP-8 compliant EAR99 Vishay
SI6926ADQ-T6-E3
Vishay Intertechnologies
Check for Price Yes Active N-CHANNEL YES 4.1 A METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1 W 150 °C VISHAY INTERTECHNOLOGY INC , compliant EAR99