Parametric results for: SI6956DQ under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 1

3 hits Apply

DS Breakdown Voltage-Min (1)

20 V 2

3 hits Apply

Drain Current-Max (ID) (1)

2.5 A 3

3 hits Apply

Drain-source On Resistance-Max (2)

90 mΩ 1 175 mΩ 1

Min (Ω) - Max (Ω)

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

3 hits Apply

R-PDSO-G8 2

3 hits Apply

e0 1 e3 1

3 hits Apply

Manufacturer (2)

Temic Semiconductors 1 Vishay Intertechnologies 2

3 hits Apply

1 1

3 hits Apply

Number of Elements (1)

2 2

3 hits Apply

Number of Terminals (1)

8 2

3 hits Apply

ENHANCEMENT MODE 2

3 hits Apply

150.0 °C 2

3 hits Apply

PLASTIC/EPOXY 2

3 hits Apply

RECTANGULAR 2

3 hits Apply

SMALL OUTLINE 2

3 hits Apply

Obsolete 2 Transferred 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

1 W 2

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply