Parametric results for: SI7456DP-T1 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 4 FAST SWITCHING 1

6 hits Apply

45.0 mJ 5

6 hits Apply

DRAIN 5

6 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 5

6 hits Apply

DS Breakdown Voltage-Min (1)

100 V 5

6 hits Apply

Drain Current-Max (ID) (1)

5.7 A 6

6 hits Apply

Drain-source On Resistance-Max (1)

25 mΩ 5

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

R-PDSO-C8 1 R-PDSO-F8 4

6 hits Apply

e0 2 e3 4

6 hits Apply

Manufacturer (2)

Vishay Intertechnologies 3 Vishay Siliconix 3

6 hits Apply

1 4

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

8 5

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 6

6 hits Apply

-55.0 °C 4

6 hits Apply

PLASTIC/EPOXY 4 UNSPECIFIED 1

6 hits Apply

RECTANGULAR 5

6 hits Apply

SMALL OUTLINE 5

6 hits Apply

Not Recommended 4 Obsolete 2

6 hits Apply

Yes 2

6 hits Apply

260 4

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

1.9 W 4

6 hits Apply

1.9 W 4 5.2 W 1

Min (W) - Max (W)

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply