Parametric results for: SI7461DP under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

125.0 mJ 5

5 hits Apply

DRAIN 5

5 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 5

5 hits Apply

DS Breakdown Voltage-Min (1)

60 V 5

5 hits Apply

Drain Current-Max (ID) (1)

8.6 A 5

5 hits Apply

Drain-source On Resistance-Max (1)

14.5 mΩ 5

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

R-PDSO-F5 1 R-XDSO-C5 4

5 hits Apply

e3 4

5 hits Apply

Manufacturer (2)

Vishay Intertechnologies 3 Vishay Siliconix 2

5 hits Apply

1 4

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

5 5

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 5

5 hits Apply

-55.0 °C 1

5 hits Apply

PLASTIC/EPOXY 1 UNSPECIFIED 4

5 hits Apply

RECTANGULAR 5

5 hits Apply

SMALL OUTLINE 5

5 hits Apply

Active 5

5 hits Apply

Yes 2

5 hits Apply

260 4

5 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 5

5 hits Apply

1.9 W 1 5.4 W 4

Min (W) - Max (W)

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply