Parametric results for: SI9435DY under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 10

11 hits Apply

DS Breakdown Voltage-Min (1)

30 V 10

11 hits Apply

Drain Current-Max (ID) (2)

5.1 A 4 5.3 A 7

Min (A) - Max (A)

11 hits Apply

Drain-source On Resistance-Max (3)

50 mΩ 7 55 mΩ 2 105 mΩ 1

Min (Ω) - Max (Ω)

11 hits Apply

METAL-OXIDE SEMICONDUCTOR 11

11 hits Apply

R-PDSO-G8 10

11 hits Apply

e0 3 e3 2

11 hits Apply

Manufacturer (4)

Fairchild Semiconductor Corporation 7 Temic Semiconductors 1 Vishay Intertechnologies 1 Vishay Siliconix 2

11 hits Apply

1 1

11 hits Apply

Number of Elements (1)

1 11

11 hits Apply

Number of Terminals (1)

8 10

11 hits Apply

ENHANCEMENT MODE 11

11 hits Apply

150.0 °C 5

11 hits Apply

PLASTIC/EPOXY 10

11 hits Apply

RECTANGULAR 10

11 hits Apply

SMALL OUTLINE 10

11 hits Apply

Obsolete 10 Transferred 1

11 hits Apply

No 1 Yes 1

11 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 11

11 hits Apply

2.5 W 3

11 hits Apply

1 W 1 2.5 W 1

Min (W) - Max (W)

11 hits Apply

Surface Mount (1)

YES 11

11 hits Apply