Parametric results for: SIA110DJ-T1-GE3 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

5.0 mJ 1

1 hit Apply

DRAIN 1

1 hit Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

1 hit Apply

DS Breakdown Voltage-Min (1)

100 V 1

1 hit Apply

Drain Current-Max (ID) (1)

12 A 1

1 hit Apply

Drain-source On Resistance-Max (1)

72 mΩ 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

7 pF 1

1 hit Apply

S-PDSO-N6 1

1 hit Apply

Manufacturer (1)

Vishay Intertechnologies 1

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Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

6 1

1 hit Apply

ENHANCEMENT MODE 1

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150.0 °C 1

1 hit Apply

-55.0 °C 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

SQUARE 1

1 hit Apply

SMALL OUTLINE 1

1 hit Apply

Active 1

1 hit Apply

NOT SPECIFIED 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

19 W 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply