Parametric results for: SIA537EDJ-T1-GE3 under Small Signal Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

DRAIN 1

1 hit Apply

Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 1

1 hit Apply

DS Breakdown Voltage-Min (1)

12 V 1

1 hit Apply

Drain-source On Resistance-Max (1)

28 mΩ 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

S-PDSO-N6 1

1 hit Apply

e3 1

1 hit Apply

Manufacturer (1)

Vishay Intertechnologies 1

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1 1

1 hit Apply

Number of Elements (1)

2 1

1 hit Apply

Number of Terminals (1)

6 1

1 hit Apply

ENHANCEMENT MODE 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

SQUARE 1

1 hit Apply

SMALL OUTLINE 1

1 hit Apply

Active 1

1 hit Apply

260 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL AND P-CHANNEL 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply