Parametric results for: SIF912EDZ-T1-E3 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 1

2 hits Apply

Configuration (1)

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR 1

2 hits Apply

DS Breakdown Voltage-Min (1)

30 V 1

2 hits Apply

Drain Current-Max (ID) (1)

7.4 A 2

2 hits Apply

Drain-source On Resistance-Max (1)

19 mΩ 1

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

R-XDSO-F6 1

2 hits Apply

e3 1

2 hits Apply

Manufacturer (2)

Vishay Intertechnologies 1 Vishay Siliconix 1

2 hits Apply

1 1

2 hits Apply

Number of Elements (1)

2 1

2 hits Apply

Number of Terminals (1)

6 1

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 1

2 hits Apply

UNSPECIFIED 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

SMALL OUTLINE 1

2 hits Apply

Obsolete 2

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

3.5 W 1

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply