Parametric results for: SIHP8N50D under Power Field-Effect Transistors

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Manufacturer Part Number: sihp8n50d
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SIHP8N50D-GE3
Vishay Intertechnologies
$0.8503 Yes End Of Life N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 500 V 1 8.7 A 850 mΩ 29 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 156 W 18 A SWITCHING SILICON TO-220AB R-PSFM-T3 150 °C PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT THROUGH-HOLE SINGLE VISHAY INTERTECHNOLOGY INC HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 unknown EAR99 Vishay
SIHP8N50D-E3
Vishay Intertechnologies
Check for Price Yes End Of Life N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 500 V 1 8.7 A 850 mΩ 29 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 156 W 18 A SWITCHING SILICON TO-220AB R-PSFM-T3 150 °C PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT THROUGH-HOLE SINGLE VISHAY INTERTECHNOLOGY INC ROHS COMPLIANT PACKAGE-3 unknown EAR99 Vishay
SIHP8N50D-E3
Vishay Siliconix
Check for Price End Of Life N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 500 V 1 8.7 A 850 mΩ 29 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 156 W 18 A SWITCHING SILICON TO-220AB R-PSFM-T3 150 °C PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT THROUGH-HOLE SINGLE VISHAY SILICONIX FLANGE MOUNT, R-PSFM-T3 unknown EAR99 Vishay
SIHP8N50D-GE3
Vishay Siliconix
Check for Price End Of Life N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 500 V 1 8.7 A 850 mΩ 29 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 156 W 18 A SWITCHING SILICON TO-220AB R-PSFM-T3 150 °C PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT THROUGH-HOLE SINGLE VISHAY SILICONIX FLANGE MOUNT, R-PSFM-T3 unknown EAR99 Vishay