Parametric results for: SNF203009 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Surface Mount Configuration (1)

SINGLE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

300 V 2

2 hits Apply

Drain Current-Max (ID) (1)

35 A 2

2 hits Apply

Drain-source On Resistance-Max (1)

90 mΩ 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

TO-254AA 2

2 hits Apply

S-MSFM-P3 2

2 hits Apply

Manufacturer (2)

Microsemi Corporation 1 Silicon Transistor Corporation 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

3 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 1

2 hits Apply

METAL 2

2 hits Apply

SQUARE 2

2 hits Apply

FLANGE MOUNT 2

2 hits Apply

Obsolete 1 Transferred 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

175 W 1

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply