Parametric results for: SPD04P10P G under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 2 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED 2

4 hits Apply

57.0 mJ 4

4 hits Apply

DRAIN 4

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

100 V 4

4 hits Apply

Drain Current-Max (ID) (2)

4 A 2 4.2 A 2

Min (A) - Max (A)

4 hits Apply

Drain-source On Resistance-Max (2)

850 mΩ 2 1 kΩ 2

Min (Ω) - Max (Ω)

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

TO-252AA 4

4 hits Apply

R-PSSO-G2 4

4 hits Apply

e3 4

4 hits Apply

Manufacturer (1)

Infineon Technologies AG 4

4 hits Apply

1 4

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

2 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

175.0 °C 4

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

SMALL OUTLINE 4

4 hits Apply

Active 2 End Of Life 1 Obsolete 1

4 hits Apply

No 2 Yes 2

4 hits Apply

260 2 NOT SPECIFIED 2

4 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 4

4 hits Apply

38 W 2

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply