Parametric results for: SPD30N06S2-23 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 2

3 hits Apply

150.0 mJ 2

3 hits Apply

DRAIN 2

3 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 2

3 hits Apply

DS Breakdown Voltage-Min (1)

55 V 2

3 hits Apply

Drain Current-Max (ID) (1)

30 A 3

3 hits Apply

Drain-source On Resistance-Max (1)

23 mΩ 2

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

TO-252 2

3 hits Apply

R-PSSO-G2 2

3 hits Apply

e3 1

3 hits Apply

Manufacturer (2)

Infineon Technologies AG 2 Rochester Electronics LLC 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

2 2

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

175.0 °C 2

3 hits Apply

PLASTIC/EPOXY 2

3 hits Apply

RECTANGULAR 2

3 hits Apply

SMALL OUTLINE 2

3 hits Apply

Active 2 Obsolete 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

83 W 1 100 W 1

Min (W) - Max (W)

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply