Parametric results for: SSF6N80A under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

ULTRA LOW RESISTANCE 1

3 hits Apply

339.0 mJ 1 486.0 mJ 2

Min (mJ) - Max (mJ)

3 hits Apply

ISOLATED 2

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

800 V 3

3 hits Apply

Drain Current-Max (ID) (2)

4.5 A 2 5.5 A 1

Min (A) - Max (A)

3 hits Apply

Drain-source On Resistance-Max (2)

2 Ω 2 2.7 Ω 1

Min (Ω) - Max (Ω)

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

TO-262AA 1

3 hits Apply

R-PSFM-T3 2 R-PSIP-T3 1

3 hits Apply

e0 1

3 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 1 Samsung Semiconductor 1 Suzhou Good-Ark Electronics Co Ltd 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 2

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

FLANGE MOUNT 2 IN-LINE 1

3 hits Apply

Active 1 Obsolete 1 Transferred 1

3 hits Apply

NOT SPECIFIED 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

90 W 2

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply