Parametric results for: SSG4435 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Surface Mount Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

30 V 2

2 hits Apply

Drain Current-Max (ID) (1)

8 A 2

2 hits Apply

Drain-source On Resistance-Max (1)

20 mΩ 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

R-PDSO-G8 2

2 hits Apply

Manufacturer (1)

Secos Corporation 2

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

8 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE 2

2 hits Apply

Contact Manufacturer 2

2 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 2

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply