Parametric results for: SSM6N42FE under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (2)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR 1 SINGLE 1

2 hits Apply

DS Breakdown Voltage-Min (1)

20 V 1

2 hits Apply

Drain Current-Max (ID) (1)

800 mA 2

2 hits Apply

Drain-source On Resistance-Max (1)

240 mΩ 1

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

R-PDSO-F6 1

2 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 2

2 hits Apply

Number of Elements (2)

1 1 2 1

Min - Max

2 hits Apply

Number of Terminals (1)

6 1

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 1

2 hits Apply

PLASTIC/EPOXY 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

SMALL OUTLINE 1

2 hits Apply

End Of Life 2

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

150 mW 1

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply