Parametric results for: SSR1N60B under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

50.0 mJ 6

8 hits Apply

DRAIN 6

8 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 6

8 hits Apply

DS Breakdown Voltage-Min (1)

600 V 6

8 hits Apply

Drain Current-Max (ID) (1)

900 mA 8

8 hits Apply

Drain-source On Resistance-Max (1)

12 Ω 6

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

8 hits Apply

4.7 pF 1

8 hits Apply

TO-252 5 TO-252AA 1

8 hits Apply

R-PSSO-G2 6

8 hits Apply

e0 1 e3 6

8 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 5 onsemi 1 Rochester Electronics LLC 2

8 hits Apply

1 6

8 hits Apply

Number of Elements (1)

1 8

8 hits Apply

Number of Terminals (1)

2 6

8 hits Apply

ENHANCEMENT MODE 8

8 hits Apply

150.0 °C 6

8 hits Apply

-55.0 °C 1

8 hits Apply

PLASTIC/EPOXY 6

8 hits Apply

RECTANGULAR 6

8 hits Apply

SMALL OUTLINE 6

8 hits Apply

Active 2 Obsolete 6

8 hits Apply

Yes 2

8 hits Apply

260 4

8 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

8 hits Apply

28 W 6

8 hits Apply

Surface Mount (1)

YES 8

8 hits Apply