Parametric results for: STD19NE06 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

1.45 mJ 3 50.0 mJ 3

Min (mJ) - Max (mJ)

6 hits Apply

DRAIN 6

6 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 6

6 hits Apply

DS Breakdown Voltage-Min (1)

60 V 6

6 hits Apply

Drain Current-Max (ID) (1)

19 A 6

6 hits Apply

Drain-source On Resistance-Max (2)

50 mΩ 3 60 mΩ 3

Min (Ω) - Max (Ω)

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

TO-251AA 2 TO-252 1 TO-252AA 3

6 hits Apply

R-PSIP-T3 2 R-PSSO-G2 4

6 hits Apply

e0 5

6 hits Apply

Manufacturer (1)

STMicroelectronics 6

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (2)

2 4 3 2

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

175.0 °C 5

6 hits Apply

PLASTIC/EPOXY 6

6 hits Apply

RECTANGULAR 6

6 hits Apply

IN-LINE 2 SMALL OUTLINE 4

6 hits Apply

Obsolete 6

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

45 W 2 70 W 3

Min (W) - Max (W)

6 hits Apply

Surface Mount (2)

NO 2 YES 4

6 hits Apply