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Parametric » Transistors » Power Field-Effect Transistors

Parametric results for: STD3NK50Z under Power Field-Effect Transistors

Select parts from the table below to compare.

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Select Parts		Part Number

		STD3NK50ZT4 STMicroelectronics
		STD3NK50Z STMicroelectronics
		STD3NK50Z-1 STMicroelectronics

			Most Relevant								Technical							Compliance				Operating Conditions				Physical						Other
Composite Price	Rohs Code	Part Life Cycle Code	Polarity/Channel Type	Surface Mount	Configuration	Number of Terminals	DS Breakdown Voltage-Min	Number of Elements	Drain Current-Max (ID)	Drain-source On Resistance-Max	Avalanche Energy Rating (Eas)	FET Technology	Operating Mode	Power Dissipation-Max (Abs)	Pulsed Drain Current-Max (IDM)	Transistor Application	Transistor Element Material	JEDEC-95 Code	JESD-30 Code	JESD-609 Code	Qualification Status	Moisture Sensitivity Level	Operating Temperature-Max	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Package Body Material	Package Shape	Package Style	Terminal Finish	Terminal Form	Terminal Position	Ihs Manufacturer	Part Package Code	Package Description	Pin Count	Reach Compliance Code	ECCN Code	Samacsys Manufacturer

Yes

Active

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

500 V

1

2.3 A

3.5 Ω

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

45 W

9.2 A

SWITCHING

SILICON

TO-252AA

R-PSSO-G2

e3

Not Qualified

1

150 °C

260

30

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn) - annealed

GULL WING

SINGLE

STMICROELECTRONICS

TO-252AA

DPAK-3

3

not_compliant

EAR99

STMicroelectronics

Check for Price

Yes

Active

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

500 V

1

2.3 A

3.3 Ω

120 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

45 W

9.2 A

SWITCHING

SILICON

TO-252AA

R-PSSO-G2

e3

Not Qualified

1

150 °C

260

30

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn) - annealed

GULL WING

SINGLE

STMICROELECTRONICS

TO-252AA

DPAK-3

3

not_compliant

EAR99

Check for Price

Yes

Active

N-CHANNEL

NO

SINGLE WITH BUILT-IN DIODE

3

500 V

1

2.3 A

3.3 Ω

120 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

45 W

9.2 A

SWITCHING

SILICON

TO-251AA

R-PSIP-T3

e3

Not Qualified

1

150 °C

NOT SPECIFIED

NOT SPECIFIED

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

STMICROELECTRONICS

TO-251AA

IPAK-3

3

not_compliant

EAR99

STMicroelectronics

Compare

STMicroelectronics

Yes

Active

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

500 V

1

2.3 A

3.5 Ω

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

45 W

9.2 A

SWITCHING

SILICON

TO-252AA

R-PSSO-G2

e3

Not Qualified

1

150 °C

260

30

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn) - annealed

GULL WING

SINGLE

STMICROELECTRONICS

TO-252AA

DPAK-3

3

not_compliant

EAR99

STMicroelectronics

STMicroelectronics

Check for Price

Yes

Active

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

500 V

1

2.3 A

3.3 Ω

120 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

45 W

9.2 A

SWITCHING

SILICON

TO-252AA

R-PSSO-G2

e3

Not Qualified

1

150 °C

260

30

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn) - annealed

GULL WING

SINGLE

STMICROELECTRONICS

TO-252AA

DPAK-3

3

not_compliant

EAR99

STMicroelectronics

Check for Price

Yes

Active

N-CHANNEL

NO

SINGLE WITH BUILT-IN DIODE

3

500 V

1

2.3 A

3.3 Ω

120 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

45 W

9.2 A

SWITCHING

SILICON

TO-251AA

R-PSIP-T3

e3

Not Qualified

1

150 °C

NOT SPECIFIED

NOT SPECIFIED

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

STMICROELECTRONICS

TO-251AA

IPAK-3

3

not_compliant

EAR99

STMicroelectronics