Parametric results for: STP16NE06 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

80.0 mJ 4

5 hits Apply

ISOLATED 2

5 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 4

5 hits Apply

DS Breakdown Voltage-Min (1)

60 V 4

5 hits Apply

Drain Current-Max (ID) (2)

11 A 3 16 A 2

Min (A) - Max (A)

5 hits Apply

Drain-source On Resistance-Max (2)

100 mΩ 2 120 mΩ 2

Min (Ω) - Max (Ω)

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

TO-220AB 4

5 hits Apply

R-PSFM-T3 4

5 hits Apply

e0 4 e3 1

5 hits Apply

Manufacturer (1)

STMicroelectronics 5

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

3 4

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 1 175.0 °C 4

Min (°C) - Max (°C)

5 hits Apply

PLASTIC/EPOXY 4

5 hits Apply

RECTANGULAR 4

5 hits Apply

FLANGE MOUNT 4

5 hits Apply

Obsolete 5

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

30 W 3 60 W 2

Min (W) - Max (W)

5 hits Apply

Surface Mount (1)

NO 5

5 hits Apply