Parametric results for: STP36NE06 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 2

3 hits Apply

180.0 mJ 2

3 hits Apply

ISOLATED 1

3 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 2

3 hits Apply

DS Breakdown Voltage-Min (1)

60 V 3

3 hits Apply

Drain Current-Max (ID) (2)

20 A 1 36 A 2

Min (A) - Max (A)

3 hits Apply

Drain-source On Resistance-Max (1)

40 mΩ 2

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

TO-220AB 2

3 hits Apply

R-PSFM-T3 2

3 hits Apply

e0 2

3 hits Apply

Manufacturer (2)

New Jersey Semiconductor Products Inc 1 STMicroelectronics 2

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 2

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

175.0 °C 2

3 hits Apply

PLASTIC/EPOXY 2

3 hits Apply

RECTANGULAR 2

3 hits Apply

FLANGE MOUNT 2

3 hits Apply

Contact Manufacturer 1 Obsolete 2

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

35 W 1 100 W 1

Min (W) - Max (W)

3 hits Apply

Surface Mount (1)

NO 2

3 hits Apply