Parametric results for: STP3N100 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

100.0 mJ 1 130.0 mJ 2

Min (mJ) - Max (mJ)

3 hits Apply

ISOLATED 2

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

1 kV 3

3 hits Apply

Drain Current-Max (ID) (3)

1.6 A 1 2 A 1 3.5 A 1

Min (A) - Max (A)

3 hits Apply

Drain-source On Resistance-Max (2)

5 Ω 2 6 Ω 1

Min (Ω) - Max (Ω)

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

40 pF 3

3 hits Apply

TO-220AB 2

3 hits Apply

R-PSFM-T3 3

3 hits Apply

e3 2

3 hits Apply

Manufacturer (1)

STMicroelectronics 3

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

FLANGE MOUNT 3

3 hits Apply

Obsolete 3

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

30 W 1 40 W 1 100 W 1

Min (W) - Max (W)

3 hits Apply

30 W 1 40 W 1 100 W 1

Min (W) - Max (W)

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply