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STU10NM60N
STMicroelectronics
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$0.6168 | Yes | Not Recommended | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 8 A | 550 mΩ | AVALANCHE ENERGY RATED | 200 mJ | 1.2 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 70 W | 32 A | SWITCHING | SILICON | 47 ns | 22 ns | TO-251AA | R-PSIP-T3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | Matte Tin (Sn) - annealed | THROUGH-HOLE | SINGLE | STMICROELECTRONICS | TO-251 | IPAK-3 | 3 | not_compliant | EAR99 | STMicroelectronics |