Parametric results for: TBB1012MMTL-E under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount

LOW NOISE 1

1 hit Apply

Configuration (1)

COMPLEX 1

1 hit Apply

DS Breakdown Voltage-Min (1)

6 V 1

1 hit Apply

Drain Current-Max (ID) (1)

30 mA 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

1.5 pF 1

1 hit Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 1

1 hit Apply

R-PDSO-G6 1

1 hit Apply

Manufacturer (1)

Renesas Electronics Corporation 1

1 hit Apply

Number of Elements (1)

2 1

1 hit Apply

Number of Terminals (1)

6 1

1 hit Apply

DUAL GATE, DEPLETION MODE 1

1 hit Apply

150.0 °C 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

SMALL OUTLINE 1

1 hit Apply

Obsolete 1

1 hit Apply

Yes 1

1 hit Apply

NOT SPECIFIED 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

250 mW 1

1 hit Apply

Power Gain-Min (Gp) (1)

15.0 dB 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply