Parametric results for: TIM1414-5 under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Surface Mount

SOURCE 3

3 hits Apply

Configuration (1)

SINGLE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

15 V 3

3 hits Apply

Drain Current-Max (ID) (1)

5.7 A 3

3 hits Apply

JUNCTION 2 METAL-OXIDE SEMICONDUCTOR 1

3 hits Apply

Highest Frequency Band (1)

KU BAND 3

3 hits Apply

R-CDFM-F2 3

3 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 3

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

2 3

3 hits Apply

DEPLETION MODE 3

3 hits Apply

175.0 °C 2

3 hits Apply

CERAMIC, METAL-SEALED COFIRED 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

FLANGE MOUNT 3

3 hits Apply

Active 1 End Of Life 1 Obsolete 1

3 hits Apply

No 2

3 hits Apply

240 2 260 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

30 W 2

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply