Parametric results for: TIM7785-8SL under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Surface Mount

SOURCE 1

2 hits Apply

Configuration (1)

SINGLE 1

2 hits Apply

DS Breakdown Voltage-Min (1)

15 V 1

2 hits Apply

Drain Current-Max (ID) (1)

7 A 1

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 1

2 hits Apply

Highest Frequency Band (1)

X BAND 1

2 hits Apply

R-CDFM-F2 1

2 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 2

2 hits Apply

Number of Elements (1)

1 1

2 hits Apply

Number of Terminals (1)

2 1

2 hits Apply

DEPLETION MODE 1

2 hits Apply

175.0 °C 1

2 hits Apply

CERAMIC, METAL-SEALED COFIRED 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

FLANGE MOUNT 1

2 hits Apply

Active 1 End Of Life 1

2 hits Apply

No 2

2 hits Apply

240 2

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 1

2 hits Apply

37.5 W 1

2 hits Apply

Surface Mount (1)

YES 1

2 hits Apply